55 Years of Metalorganic Chemical Vapor Deposition (MOCVD)
Metal organic chemical vapor deposition (MOCVD) and related techniques are a mainstay of semiconductor synthesis, spanning arsenides, anitmonides, nitrides, and complex device stacks. More recently, MOCVD has been used to create novel materials including two-dimensional materials, oxides, and chalcogenides. This special collection includes but is not limited to papers on materials synthesis by MOCVD and related techniques, MOCVD-enabled devices such as LEDs or solar cells, heterogeneous integration that includes MOCVD-grown materials, and advances in MOCVD and related technologies.
Topics covered include, but are not limited to:
- Novel materials synthesis
- MOCVD-enabled device (e.g. LEDs, solar cells)
- Heterogeneous integration
- Advances in MOCVD and related technologies
- III-V Semiconductors and Devices (Nitrides, Arsenides, Phosphides, Antimonides, Bismites etc.)
- II-VI Materials and Devices (CdTe, ZnO, ZnSe, ZnS, MCT, etc.)
- IV-IV Materials and Devices (SiC, SiGe, GeSn, etc.)
- Semiconducting Oxides and Epitaxial Dielectrics (TCO, Ga2O3, SnO2, etc.)
- 2D Materials and van der Waals Heterostructures
- Low-dimensional Structures (Nanowires, -dots)
- Electronic and optoelectronic devices based on the materials deposited by MOCVD
Guest Editors
Necmi Biyikli, University of Connecticut
Mona Ebrish, Vanderbilt University
Sriram Krishnamoorthy, University of California, Santa Barbara
Xiuling Li, University of Texas
Okhyun Nam, Technical University of Korea
Hongping Zhao, The Ohio State University
Editors
Stephanie Law, Pennsylvania State University
Joshua Zide, University of Delaware
Manuscript Details & Submission
Authors are encouraged to use the JVST article template. During submission, you will have an opportunity to indicate that your paper is a part of this collection by choosing the Special Topic or Conference Collection on “55 Years of Metalorganic Chemical Vapor Deposition (MOCVD)”.