55 Years of Metalorganic Chemical Vapor Deposition (MOCVD)

Submission Deadline: September 29, 2023

Metal organic chemical vapor deposition (MOCVD) and related techniques are a mainstay of semiconductor synthesis, spanning arsenides, anitmonides, nitrides, and complex device stacks. More recently, MOCVD has been used to create novel materials including two-dimensional materials, oxides, and chalcogenides. This special collection includes but is not limited to papers on materials synthesis by MOCVD and related techniques, MOCVD-enabled devices such as LEDs or solar cells, heterogeneous integration that includes MOCVD-grown materials, and advances in MOCVD and related technologies.

Topics covered include, but are not limited to:

  • Novel materials synthesis
  • MOCVD-enabled device (e.g. LEDs, solar cells)
  • Heterogeneous integration
  • Advances in MOCVD and related technologies
  • III-V Semiconductors and Devices (Nitrides, Arsenides, Phosphides, Antimonides, Bismites etc.)
  • II-VI Materials and Devices (CdTe, ZnO, ZnSe, ZnS, MCT, etc.)
  • IV-IV Materials and Devices (SiC, SiGe, GeSn, etc.)
  • Semiconducting Oxides and Epitaxial Dielectrics (TCO, Ga2O3, SnO2, etc.)
  • 2D Materials and van der Waals Heterostructures
  • Low-dimensional Structures (Nanowires, -dots)

Guest Editors

Necmi Biyikli, University of Connecticut

Mona Ebrish, Vanderbilt University

Sriram Krishnamoorthy, University of California, Santa Barbara

Xiuling Li, University of Texas

Okhyun Nam, Technical University of Korea

Hongping Zhao, The Ohio State University

Editors

Stephanie Law, Pennsylvania State University

Joshua Zide, University of Delaware

Manuscript Details & Submission

Authors are encouraged to use the JVST article template. During submission, you will have an opportunity to indicate that your paper is a part of this collection by choosing the Special Topic or Conference Collection “55 Years of Metalorganic Chemical Vapor Deposition (MOCVD)”.
Submission Deadline: September 29, 2023