Ultrawide Bandgap Semiconductors
(Ultra) wide bandgap ((U)WBG) materials offer unparalleled characteristics: high breakdown fields, wide thermal tolerance range, and radiation resistance, enabling high-power, high-temperature, and harsh-environment operation. This Special Topic is dedicated to exploring (U)WBG semiconductors and their emergent properties, focusing on their remarkable material characteristics and diverse applications. We invite contributions across critical domains, including advanced synthesis techniques for scalable material growth, in-depth analyses of fundamental electronic and optical properties, innovative device design and fabrication strategies, experimental demonstrations of (U)WBG device applications, and discussions on emerging challenges and future research directions. By bringing together diverse expertise and focusing on both fundamental understanding and practical implementation, this special topic will contribute significantly to unlocking the full potential of (U)WBG semiconductors and shaping the future of electronic and optoelectronic technologies.
Topics covered include, but are not limited to:
- Advanced synthesis techniques
- Thermal, optical, electronic properties
- Fundamental property characterization
- Materials and interface effects in devices
- Structure and stability of defects and defect complexes
- Beyond-CMOS technologies
- Strain and interface engineering
- Advanced characterizations
- Data driven synthesis
Guest Editors
Man Hoi Wong, Hong Kong University of Science and Technology
Elaheh Ahmadi, University of California, Los Angeles
Oliver Bierwagen, Paul-Drude-Institut fur Festkorperelektronik
Uttam Singisetti, University at Buffalo