Wide Bandgap Semiconductor Materials and Devices
Technologies on wide bandgap semiconductor materials and devices continue to make excellent progress, and the intense activities have already led to many applications. Thanks to the success of these efforts, a variety of materials, including both traditional wide bandgap semiconductors represented by SiC, GaN and ZnO, and emerging ultra-wide bandgap materials (e.g. Ga2O3, diamond, and boron nitride), are now subjects of research and development. This special topic aims to provide the state-of-the-art wide bandgap material and device technologies.
Topics covered include, but are not limited to:
- Bulk and substrate technologies
- Epitaxial growth technologies
- Optical, electronic, and thermal properties
- Theoretical calculations
- Low-dimensional structures and devices
- Optical devices (light emitters and detectors)
- Electronic devices (transistors and diodes)
- Quantum and novel applications
Guest Editors
Masataka Higashiwaki, National Institute of Information and Communications Technology, Japan
Bo Shen, Peking University, China
Joel Varley, Lawrence Livermore National Laboratory, USA
JAP Editors
Associate Editor Kin Man Yu
Associate Editor Wei Lu
Submission and acceptance criteria:
Manuscripts considered for publication in Journal of Applied Physics are expected to meet the journal’s standard of acceptance: to report on original and timely results that significantly advance understanding in contemporary applied physics. Material that is exclusively review in nature is not considered for publication. Manuscripts submitted for consideration in this Special Topic must meet the same criteria and will undergo the journal’s standard peer-review process. The Editorial Team of Journal of Applied Physics will issue final decisions on the submitted manuscripts. Manuscripts will publish immediately upon acceptance.
For more information on the journal’s editorial policies, please click here.