Novel Epitaxy of Functional Materials
Epitaxy of single-crystalline semiconductors lay the foundations for advanced electronics and optoelectronics by providing the active materials for devices. To achieve the highest device performance, single-crystalline films with minimal dislocation density are desired. Conventional approaches have limitations because of lattice mismatch and thermal expansion mismatch. Accordingly, several advanced approaches have been developed, such as low-temperature buffer approach, lattice-engineered buffer approach, metamorphic buffer approach, epitaxial lateral overgrowth, domain-matched epitaxy, van der Waals epitaxy, and remote epitaxy.
To achieve complex heterostructures with large lattice mismatch, researchers have developed alternative approaches such as lift-transfer and layer transfer, which give the freedom to transfer epitaxial materials onto target substrates. In this Special Topic, we address current progress and challenges in advanced epitaxy.
Topics covered include, but are not limited to:
- Van der Waals epitaxy
- Remote epitaxy
- Lattice mismatch management
- Thermal expansion mismatch management
- Structural configuration
- Lift-off and layer-transfer method
- III-V on Si
- Heterointegration
- Advanced modeling and characterization
- High performance devices
Guest Editors
Jeehwan Kim, Massachusetts Institute of Technology, USA
Gyu-Chul Yi, Seoul National University, South Korea
Abdallah Ougazzaden, Georgia Tech-Lorraine, France
Jian Shi, Rensselaer Polytechnic Institute, USA
JAP Editors
Associate Editor Jian Shi
Associate Editor Rachel Goldman
Submission and acceptance criteria:
Manuscripts considered for publication in Journal of Applied Physics are expected to meet the journal’s standard of acceptance: to report on original and timely results that significantly advance understanding in contemporary applied physics. Material that is exclusively review in nature is not considered for publication. Manuscripts submitted for consideration in this Special Topic must meet the same criteria and will undergo the journal’s standard peer-review process. The Editorial Team of Journal of Applied Physics will issue final decisions on the submitted manuscripts. Manuscripts will publish immediately upon acceptance.
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