Wladyslaw (Wladek) Walukiewicz (1946-2022) contributed to the field of semiconductor physics throughout his long scientific career, most of which took place at the Lawrence Berkeley National Laboratory. His research interests were wide-ranging but followed a common thread of understanding the relationships between defects, dopant impurities, the electronic structure of semiconductors, and their resulting optical and transport properties. Notable advances included elucidating the narrow bandgap electronic structure of InN, developing the band anticrossing model to understand the electronic structure of highly mismatched semiconductor alloys, establishing the Fermi stabilization energy concept and amphoteric defect model to explain doping limits in semiconductors, the behavior of ferromagnetic semiconductors, and the interplay of defects and electron transport. These contributions have paved the way for designing semiconductors for optoelectronic applications, including photovoltaics and water splitting. This special issue is intended to celebrate Dr. Walukiewicz’s career and highlight the ways these breakthroughs continue to impact semiconductor research that is done today.
Topics covered include, but are not limited to:
- Highly mismatched alloys: materials and applications
- Group III Nitride semiconductors
- Magnetic impurities and ferromagnetic semiconductors
- Behavior of native and deep defects in semiconductors
- Dopants and carrier transport in semiconductors
- Semiconductors for water splitting
- Semiconductors for photovoltaics
Kristin Alberi, US National Renewable Energy Laboratory
Robert Kudrawiec, Wrocław University of Science and Technology
Yasushi Nanishi, Ritsumeikan University
Junqiao Wu, University of California, Berkeley
Kin Man Yu, Associate Editor
Submission and acceptance criteria:
Manuscripts considered for publication in Journal of Applied Physics are expected to meet the journal’s standard of acceptance: to report on original and timely results that significantly advance understanding in contemporary applied physics. Material that is exclusively review in nature is not considered for publication. Manuscripts submitted for consideration in this Special Topic must meet the same criteria and will undergo the journal’s standard peer-review process. The Editorial Team of Journal of Applied Physics will issue final decisions on the submitted manuscripts. Manuscripts will publish immediately upon acceptance.
For more information on the journal’s editorial policies, please click here.
Manuscripts must be submitted through the online submission system (PXP) of Journal of Applied Physics. Please select the Special Topic “Native Defects, Impurities and the Electronic Structure of Compound Semiconductors: A Tribute to Dr. Wladyslaw Walukiewicz” to submit your manuscript for consideration in this Special Topic.