Frontiers in Nitride Semiconductors Research
Group-III nitride semiconductors have wide and ultra-wide band gaps suited for a vital role in enabling electrification, sustainable energy and digitalization. The high breakdown field of such semiconductors make possible more efficient and compact solutions in infrastructure for electric power transmission and generation, and propulsion and charging of electric vehicles. Group-III nitrides facilitate power generation and amplification at high frequencies and advanced photonic and optoelectronics such as micro-LEDs within the visible spectral range and UV lasers. The focus of this special topic is on the latest achievements in nitride semiconductor materials, devices, and integrated circuits relevant for sustainable applications in power electronics, high-frequency electronics and photonics.
Topics covered include, but are not limited to:
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Growth – Bulk crystal growth, III-nitride epitaxy, doping and point defects, nitride alloys, and heterostructures as well as growth methods and growth technologies, wafer processing, microstructures, nanostructures, theory, novel materials such as B and Sc containing III-nitrides, 2D materials, quaternary InAlGaN, etc.
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Physics and Characterization – Optical and electronic properties of III-nitrides, including novel materials, structural analysis, defect characterization, nanophotonics, nanoelectronics, crystal band structures, electronic states of defects, theory and simulation.
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Optical Devices – Nitride-based light emitters such as micro-LEDs, edge emitting laser diodes, VCSELs, multi-section laser diodes, UV-LEDs, UV-laser diodes, single photon emitters, tunnel-junction LEDs, photo-detectors, photovoltaics, nanophotonic physics and devices, frequency combs, non-linear optics, intersubband emitters, sensors, device technologies and simulations.
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Electronic Devices – Transistors, diodes, switches, amplifiers, power and RF applications, actuators, acoustic devices, device processing, transport and switching properties, contacts and reliability, device concepts and simulations.
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Novel materials and device concepts – Earth-abundant Nitride semiconductor materials, 2D Nitride materials, innovative device design and fabrication concepts, nitrides for new quantum technologies.
Guest Editors
Oliver Ambacher (University of Freiburg, Germany)
Vanya Darakchieva (Lund University, Sweden; Linköping University, Sweden)
Izabella Grzegory (Institute of High-Pressure Physics, Polish Academy of Sciences)
Åsa Haglund (Chalmers University, Sweden)
Erik Lind (Lund University, Sweden)
Piotr Perlin (Institute of High-Pressure Physics, Polish Academy of Sciences)
Filip Tuomisto (University of Helsinki, Finland)
Lars Samuelson (SusTech Southern University of Science and Technology, China)
Mathias Schubert (University of Nebraska Lincoln, USA; Lund University, Sweden)