Antiferromagnetic Spintronics
Recent advances in unravelling and utilizing unexplored functionalities of antiferromagnets have nucleated and energized the field of antiferromagnetic spintronics, which aims to understand and control the dynamics of antiferromagnetic moments or spin transport for use in new-concept solid-state devices. Antiferromagnets are inherently promising for active elements as they have net zero magnetization, making them robust to external magnetic fields, and their resonance frequencies are in the THz range, allowing for ultrafast write speeds. These qualities combined with the rich physics of their spin dynamics have inspired new theoretical investigations and experimental techniques, including fundamental studies of spin-orbit interaction, new electrical and optical methods of controlling antiferromagnetic order, and the creation of hybrid structures with novel switching characteristics. As research in this field expands rapidly in depth and breadth, it becomes increasingly important for the community to consolidate and share its knowledge. This Special Topic on antiferromagnetic spintronics provides a timely forum for investigators to share their new results, methods, and perspectives in a format that allows for in-depth analysis and discussion.
Topics covered include, but are not limited to:
- Electrical or optomagnetic control of antiferromagnets
- Spin-orbit interactions and torques
- Ultrafast spin dynamics
- Antiferromagnetic textures: Domain walls, skrymions, etc.
- Spin waves
- Characterization and imaging of antiferromagnets
- Microfabrication and thin film deposition techniques
- Spin transport properties including spin Hall effect, spin galvanic effect, etc.
- Topological Hall effect
- Chiral anomaly
- Controlled exchange coupling
- Interaction with topologically protected electronic states
- Calculations of magnetic structure
- Insulating and metallic antiferromagnets
- Collinear vs noncollinear antiferromagnets
- Antiferromagnet / ferromagnet interfaces
- Synthetic antiferromagnets
- Memory devices
- Neuromorphic/brain-inspired computing
Guest Editors
Virginia O. Lorenz
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
Shunsuke Fukami
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 Japan
Olena Gomonay
Johannes Gutenberg Universität Mainz, Institute of Physics, INSPIRE Group, Mainz, Germany
Submission and acceptance criteria:
Manuscripts considered for publication in Journal of Applied Physics are expected to meet the journal’s standards of acceptance, i.e. to report on original and timely results that significantly advance understanding in the current status of contemporary applied physics; material that is exclusively review in nature is not considered for publication. Manuscripts submitted for consideration in this Special Topic must meet the same criteria and will undergo the journal’s standard peer-review process. The Editorial Team of the Journal of Applied Physics will issue final decisions on the submitted manuscripts.
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