(Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics
Wide-bandgap semiconductors (e.g., SiC and GaN) promise high tolerance to extreme environments, such as: ionizing radiation, energetic particles, high and low temperatures. Ultrawide-bandgap semiconductors, e.g., Ga2O3, B-Al-Ga-N, and diamond, are being investigated for even better extreme environment properties. Electronic devices capable of operating in extreme environments, with reduced need for environment control or shielding, are desirable for a wide range of applications, such as: cryogenic electronics, engine control, down hole drilling, and space systems.
Topics covered include, but are not limited to:
- Physics (e.g., electron and phonon transport) of (ultra)wide-bandgap semiconductors subject to radiation and extreme temperatures
- (Ultra)wide-bandgap semiconductor materials under extreme environments
- (Ultra)wide-bandgap semiconductor defect properties under extreme environment
- (Ultra)wide-bandgap semiconductor-based structures for extreme environments, such as: contacts, junctions, gate dielectrics, passivation dielectrics, and interconnects
- (Ultra)wide-bandgap electronic devices, including diodes, field-effect transistors, and bipolar junction transistors, for extreme environment operation
- Advanced characterization techniques for extreme environment semiconductor materials and devices
Guest Editors
Rongming Chu, Pennsylvania State University
Kevin Chen, Hong Kong University of Science and Technology
Carl-Mikael Zetterling, KTH Royal Institute of Technology
Ronald Schrimpf, Vanderbilt University
APL Editors
Hongping Zhao, The Ohio State University