Ultrawide Bandgap Semiconductors
Research in ultra-wide-bandgap (UWBG) semiconductor materials and devices continues to progress rapidly, providing new and exciting research opportunities for a wide range of electronic, optical, sensing and quantum applications. Materials with bandgaps exceeding that of gallium nitride (3.4 eV) and silicon carbide (3.3 eV), such as gallium oxide (aluminum gallium oxide), diamond, cubic-boron nitride and aluminum gallium nitride are at the frontier of semiconductor materials research and device physics.
Topics covered include, but are not limited to:
- UWBG bulk crystals and substrates technologies
- UWBG electronic and optoelectronic properties
- UWBG power electronic devices
- UWBG defects science and doping
- UWBG low-dimensional structures and devices
- UWBG carrier recombination dynamics
- UWBG gate and passivation dielectrics
- UWBG thermal properties and thermal engineering
- Ultraviolet light emitting diodes and detectors
Guest Editors
Masataka Higashiwaki; National Institute of Information and Communications Technology
Robert Kaplar; Sandia National Laboratories
Julien Pernot; Université Grenoble Alpes
Hongping Zhao; The Ohio State University