Spin-Orbit Torque (SOT): Materials, Physics, and Devices
The explosion of big data requires the development of fast, energy-efficient, and nonvolatile data storage and processing techniques. Among the existing candidates, spintronic devices exhibit prominent attractive features. However, fast and energy-efficient methods for magnetization manipulation remain an essential challenge for the operation of spintronic devices. Spin-orbit torque (SOT), exerted by the spin current on the magnetization, originates from spin-orbit coupling effects such as the spin Hall effect, anomalous Hall effect, and Rashba effect. Compared to the classic spin-transfer torque (STT), SOT exhibits superior performance in terms of efficiency and speed. Consequently, the SOT effect has become a research hotspot for the spintronics, information science and technology communities.
Pioneering works have shown that the SOT technique can be applied to develop the SOT-based magnetic random-access memory (MRAM), spin nano-oscillators, microwave analyzers, true random number generators, spin logic, unique data processing devices, and more. Apart from the new device inventions, forefront research focuses on improving device performance from the aspects of material optimization and deeper physical understanding. Thus, the SOT technique seems very promising to be used in practical applications and even reshape the landscape of spintronics.
Topics covered include, but are not limited to:
- SOT-heterostructures and new materials
- SOT-characterization method development
- SOT-oscillator and SOT-FMR
- SOT-spin logic
- SOT-MTJ and SOT-MRAM
- SOT applications in neuromorphic computing, etc.
Xiufeng Han (Institute of Physics, Chinese Academy of Sciences)
Guoqiang Yu (Institute of Physics, Chinese Academy of Sciences)
Caihua Wan (Institute of Physics, Chinese Academy of Sciences)
Samuel D. Bader (Argonne National Laboratory)