Ferroelectricity in Hafnium Oxide: Materials and Devices
Since the unexpected discovery of ferroelectricity in hafnium oxide-based materials, the interest in this topic is continuously on the rise, both from basic science and application-oriented research sides. There are still many missing links to fully understand how the ferroelectric phase in hafnium oxide-based materials is formed and how it can be precisely controlled. The possibility to easily integrate a ferroelectric into a CMOS process allows for many new device concept while topics of variability and reliability still need to be solved. The special topic will deal with all aspects of ferroelectricity in hafnium oxide-based materials.
Topics covered include, but are not limited to:
- Microscopic origin of ferroelectricity in doped and undoped hafnium oxide
- Properties of ferroelectric hafnium oxide
- Ferroelectric capacitors using hafnium oxide
- Ferroelectric field effect transistors
- Negative capacitance in ferroelectric hafnium oxide
- Atomistic simulations of ferroelectric hafnium oxide
- Device applications of ferroelectric hafnium oxide
- Piezo- and pyroelectricity in hafnium oxide based materials
- Ferroelectric tunnel junctions
Guest Editors
Thomas Mikolajick – NaMLab
Uwe Schroeder – NaMLab
Min Hyuk Park – Pusan National University
APL Editor
Susan Trolier-McKinstry – Pennsylvania State University