Field Theory Methods in Condensed Matter Physics for Future Post-Transistor Devices

The Transistor is approaching 1 nm. At that scale, the electron-electron interactions void the standard Wilson-Bloch approaches that guided the semiconductor revolution since the ’30s. For many years we have seen electron-electron interactions in textbooks and the literature in which QFT is applied to condensed matter beyond the “many-body” approaches. There is now a need to bring the “Functional Euclidean Formalisms” into the materials that switch due to electron-electron interactions. Materials and devices need to be understood in this context as the basis for ‘Switching Models” that involve bandgap reduction suitable to low applied voltages. The next switch is the focus and the theory that involves control of screening (and not) the interaction, and possible topological effects, whilst the complete picture of doping, defects, and applied bias is handled in the QFT-Condensed Matter in a manner suitable to propose or explain current devices is needed. Attention to nonvolatile switches is also a secondary but important focus.

Topics covered include, but are not limited to:

Guest Editors:

Dr. Carlos A. Paz de Araujo, Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs

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• Please submit through the online submission system.
• Under manuscript type → select “Article” or “Review”.
• Under manuscript information → Manuscript classification → select: “Field Theory Methods in Condensed Matter Physics for Future Post-Transistor Devices”